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The surface or interfacial tension beneath the thermal equilibrium is decided by material alone no matter a state thereof. FIG. 18 reveals that material B on a flat materials A turns into orbicular form underneath a thermal equilibrium state. The material of the barrier steel is such that response with the Si substrate is suppressed. A (100) Si single crystal 11 is used as a substrate. Even in a case the place the spherically agglomerated Al islands involved with the one-crystal interconnection may be eliminated at a later course of, there may be remained a crystal grain boundary in a portion of the one-crystal interconnection after the elimination thereof, thus possibly contributing to the reduction of wiring reliability. FIGS. 22A-22C illustrate a case where material B is stuffed into the fabric B the place there exist both a densely situated wiring groove and a non-densely positioned wiring groove on the identical gadget. So as to solve such problems, it is necessary to keep away from the case the place the amount of Al to be stuffed within the groove is in excess of what is necessary in order that the spherically agglomerated Al islands are formed and to avoid the case where the Al quantity is in wanting what is necessary in order that the interconnection is disconnected.

Moreover, the wiring metallic is filled in the groove of the wiring area by agglomeration, and the residual excess steel movie could also be left in the area of no wiring. FIGS. 25A, Aluminum single wire 25B and 25C present electrode wirings the place there are supplied excess metal storing regions for storing a residual wiring metals. FIGS. 44A-44C present an electrode wiring structure where the wettability bettering layer is formed within the inner surface of the groove. FIGS. 43A-43C present electrode wiring constructions where there are offered barrier layers. FIGS. 45A-45C present an electrode wiring construction the place there is formed the wettability bettering layer in the realm other than the groove portion. FIGS. 33A-33C show the smoothly curved surface of the higher floor of wiring formed based on the wettability between the Al and the interlayer insulator. Having good wettability signifies that materials is formed onto a layer or a groove in such a manner that: a contact angle between, say, an higher material and a decrease materials disposed underneath the higher material is comparatively low.

FIG. 34 shows the smoothly curved floor of the upper surface of wring downwardly in line with the seventh embodiment. 13A-13C present cross sectional views for making a semiconductor gadget based on the fourth embodiment. FIG. 11A-11E show cross sectional views for making a semiconductor system based on the third embodiment. With reference to FIG. 1A, FIG. 1B and FIG. 1 C, there are proven cross sectional views for making a semiconductor machine in response to the first embodiment of the current invention. Embodiments of the current invention will now be described with reference to the drawings. Features of the current invention will develop into apparent within the course of the following description of exemplary embodiments which are given for illustration of the invention and should not intended to be limiting thereof. Gases utilized within the RIE are mixture of CF.sub.4 and H.sub.2 which movement at a rate of sixteen SCCM (normal cc per minute) and 24 SCCM, respectively. Thus, it is important to obtain, from time and temperature, the temperature-rise fee at which agglomeration temperature is reached as proven in FIG. 3. When the temperature-rise rate is excessive, agglomeration begins throughout which nearly no response product is produced.

It shall be appreciated that an arriving time within which the agglomeration does not happen further within the groove may be kept as such although within the expertise carried out by the applicants this time the device is cooled in a pure manner after a temperature rise. A stress at the time of etching is managed to forty mTorr and an applied power on the time of etching is 800 W. Thereafter, a resist is removed in an environment of oxygen plasma. Thereafter, there's obtained a significant impact of suppressing the diffusion and reaction between W and Al, and Al and Si, respectively, in order that the C film can be utilized as a barrier layer. Ar is a gas that's utilized in the sputtering, a background strain is lower than 10.sup.-8 Torr, a pressure below sputtering is 3.times.10.sup.-3 Torr, and an applied power is 6 KW, so as to kind movie suppressing the formation of the native oxide film. Then, gasoline utilized in the etching was CF.sub.4, an etching stress was 7.Eight mTorr, and the utilized power was 50 W. By the RIE, the bottom face and facet face of the groove are made so that wettability thereof is good.